DMJ70H601SK3-13 PDF Datablad Download - MOSFET N-CHANNEL 700V 8A TO252

Specifikationer for DMJ70H601SK3-13

Varenummer : DMJ70H601SK3-13

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET N-CHANNEL 700V 8A TO252

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 700V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 8A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 600 mOhm @ 2.1A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 20.9nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 686pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : TO-252, (D-Pak)

Pakke / tilfælde : TO-252-3, DPak (2 Leads + Tab), SC-63

Vægt : -

Tilstand : Nye og originale

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Producentens varenummer

DMJ70H601SK3-13

Intern Part Number

AX-DMJ70H601SK3-13

Fabrikant

Diodes Incorporated

Kort beskrivelse

MOSFET N-CHANNEL 700V 8A TO252

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

318900 Stykker

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har DMJ70H601SK3-13 på lager til sælge.

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DMJ70H601SK3-13 Blad

Specifikationer for DMJ70H601SK3-13

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