Specifikationer for IAUC120N04S6N009ATMA1

Varenummer : IAUC120N04S6N009ATMA1
Fabrikant : Infineon Technologies
Beskrivelse : MOSFET N-CH 40V 120A PG-HSOG-8
Serie : Automotive, AEC-Q101, OptiMOS™
Del Status : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 40V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 120A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 7V, 10V
Rds On (Max) @ Id, Vgs : 0.9 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 115nC @ 10V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : 7360pF @ 25V
FET-funktion : -
Power Dissipation (Max) : 150W (Tc)
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : PG-TDSON-8
Pakke / tilfælde : 8-PowerTDFN
Vægt : -
Tilstand : Nye og originale
Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Producentens varenummer
Intern Part Number
Kort beskrivelse
MOSFET N-CH 40V 120A PG-HSOG-8
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
362120 Stykker
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IAUC120N04S6N009ATMA1 på lager til sælge.
Shipping muligheder og forsendelse tid:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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