IPDD60R050G7XTMA1 PDF Datablad Download - MOSFET NCH 650V 135A PG-HDSOP-10

Specifikationer for IPDD60R050G7XTMA1

Varenummer : IPDD60R050G7XTMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET NCH 650V 135A PG-HDSOP-10

Serie : CoolMOS™ G7

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 47A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 50 mOhm @ 15.9A, 10V

Vgs (th) (Max) @ Id : 4V @ 800µA

Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2670pF @ 400V

FET-funktion : -

Power Dissipation (Max) : 278W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-HDSOP-10-1

Pakke / tilfælde : 10-PowerSOP Module

Vægt : -

Tilstand : Nye og originale

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Producentens varenummer

IPDD60R050G7XTMA1

Intern Part Number

AX-IPDD60R050G7XTMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET NCH 650V 135A PG-HDSOP-10

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

81855 Stykker

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPDD60R050G7XTMA1 på lager til sælge.

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IPDD60R050G7XTMA1 Blad

Specifikationer for IPDD60R050G7XTMA1

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