IPI037N08N3GHKSA1 PDF Datablad Download - MOSFET N-CH 80V 100A TO262-3

Specifikationer for IPI037N08N3GHKSA1

Varenummer : IPI037N08N3GHKSA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 80V 100A TO262-3

Serie : OptiMOS™

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 80V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 100A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 3.75 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 155µA

Gate Charge (Qg) (Max) @ Vgs : 117nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 8110pF @ 40V

FET-funktion : -

Power Dissipation (Max) : 214W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : PG-TO262-3

Pakke / tilfælde : TO-262-3 Long Leads, I²Pak, TO-262AA

Vægt : -

Tilstand : Nye og originale

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Producentens varenummer

IPI037N08N3GHKSA1

Intern Part Number

AX-IPI037N08N3GHKSA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 80V 100A TO262-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

8376 Stykker

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPI037N08N3GHKSA1 på lager til sælge.

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IPI037N08N3GHKSA1 Blad

Specifikationer for IPI037N08N3GHKSA1

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