IPS65R1K0CEAKMA1 PDF Datablad Download - MOSFET N-CH 650V 4.3A TO-251-3

Specifikationer for IPS65R1K0CEAKMA1

Varenummer : IPS65R1K0CEAKMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 650V 4.3A TO-251-3

Serie : CoolMOS™ CE

Del Status : Not For New Designs

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 650V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 4.3A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs : 15.3nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 328pF @ 100V

FET-funktion : -

Power Dissipation (Max) : 37W (Tc)

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-251

Pakke / tilfælde : TO-251-3 Stub Leads, IPak

Vægt : -

Tilstand : Nye og originale

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Producentens varenummer

IPS65R1K0CEAKMA1

Intern Part Number

AX-IPS65R1K0CEAKMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 650V 4.3A TO-251-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1362490 Stykker

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPS65R1K0CEAKMA1 på lager til sælge.

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IPS65R1K0CEAKMA1 Blad

Specifikationer for IPS65R1K0CEAKMA1

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