SPB11N60S5ATMA1 PDF Datablad Download - MOSFET N-CH 600V 11A TO-263

Specifikationer for SPB11N60S5ATMA1

Varenummer : SPB11N60S5ATMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 600V 11A TO-263

Serie : CoolMOS™

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 11A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 380 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1460pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-TO263-3-2

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vægt : -

Tilstand : Nye og originale

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Producentens varenummer

SPB11N60S5ATMA1

Intern Part Number

AX-SPB11N60S5ATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 600V 11A TO-263

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

9248 Stykker

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SPB11N60S5ATMA1 på lager til sælge.

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SPB11N60S5ATMA1 Blad

Specifikationer for SPB11N60S5ATMA1

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