TK3A60DA(Q,M) Blad
Specifikationer for TK3A60DA(Q,M)
Varenummer : TK3A60DA(Q,M)
Fabrikant : Toshiba Semiconductor and Storage
Beskrivelse : MOSFET N-CH 600V 2.5A TO-220SIS
Serie : π-MOSVII
Del Status : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 600V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2.5A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.8 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±30V
Inputkapacitans (Ciss) (Max) @ Vds : 380pF @ 25V
FET-funktion : -
Power Dissipation (Max) : 30W (Tc)
Driftstemperatur : 150°C (TJ)
Monteringstype : Through Hole
Leverandør Device Package : TO-220SIS
Pakke / tilfælde : TO-220-3 Full Pack
Vægt : -
Tilstand : Nye og originale
Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET N-CH 600V 2.5A TO-220SIS
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
386445 Stykker
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har TK3A60DA(Q,M) på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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