TK62J60W,S1VQ PDF Datablad Download - MOSFET N CH 600V 61.8A TO-3PN

Specifikationer for TK62J60W,S1VQ

Varenummer : TK62J60W,S1VQ

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N CH 600V 61.8A TO-3PN

Serie : DTMOSIV

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 61.8A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 38 mOhm @ 30.9A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 6500pF @ 300V

FET-funktion : Super Junction

Power Dissipation (Max) : 400W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-3P(N)

Pakke / tilfælde : TO-3P-3, SC-65-3

Vægt : -

Tilstand : Nye og originale

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Producentens varenummer

TK62J60W,S1VQ

Intern Part Number

AX-TK62J60W,S1VQ

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N CH 600V 61.8A TO-3PN

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

37782 Stykker

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TK62J60W,S1VQ på lager til sælge.

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