SI4666DY-T1-GE3 - MOSFET N-CH 25V 16.5A 8-SOIC

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET N-CH 25V 16.5A 8-SOIC
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
23856 Pieces
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SI4666DY-T1-GE3 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for SI4666DY-T1-GE3

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : SI4666DY-T1-GE3
Fabrikant : Vishay Siliconix
Beskrivelse : MOSFET N-CH 25V 16.5A 8-SOIC
Serie : TrenchFET®
Del Status : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 25V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 16.5A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±12V
Inputkapacitans (Ciss) (Max) @ Vds : 1145pF @ 10V
FET-funktion : -
Power Dissipation (Max) : 2.5W (Ta), 5W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : 8-SO
Pakke / tilfælde : 8-SOIC (0.154", 3.90mm Width)
Vægt : -
Tilstand : Nye og originale
relaterede links : SI466 , SI4666D

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