SI7726DN-T1-GE3 - MOSFET N-CH 30V 35A 1212-8

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET N-CH 30V 35A 1212-8
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
1096635 Pieces
henvisning Pris
USD 0.25584
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SI7726DN-T1-GE3 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for SI7726DN-T1-GE3

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : SI7726DN-T1-GE3
Fabrikant : Vishay Siliconix
Beskrivelse : MOSFET N-CH 30V 35A 1212-8
Serie : SkyFET®, TrenchFET®
Del Status : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 35A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : 1765pF @ 15V
FET-funktion : -
Power Dissipation (Max) : 3.8W (Ta), 52W (Tc)
Driftstemperatur : -50°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : PowerPAK® 1212-8
Pakke / tilfælde : PowerPAK® 1212-8
Vægt : -
Tilstand : Nye og originale
relaterede links : SI772 , SI7726D

Dokumenter til SI7726DN-T1-GE3

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