BSB104N08NP3GXUSA1 - MOSFET N-CH 80V 13A 2WDSON

Producentens varenummer

BSB104N08NP3GXUSA1

Intern Part Number

AX-BSB104N08NP3GXUSA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 80V 13A 2WDSON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

710105 Pieces

henvisning Pris

~~USD 0.3951~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BSB104N08NP3GXUSA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BSB104N08NP3GXUSA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BSB104N08NP3GXUSA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 80V 13A 2WDSON

Serie : OptiMOS™

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 80V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 13A (Ta), 50A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 10.4 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2100pF @ 40V

FET-funktion : -

Power Dissipation (Max) : 2.8W (Ta), 42W (Tc)

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : MG-WDSON-2, CanPAK M™

Pakke / tilfælde : 3-WDSON

Vægt : -

Tilstand : Nye og originale

relaterede links : BSB104 , BSB104N08

Dokumenter til BSB104N08NP3GXUSA1

Dataark : BSB104N08NP3GXUSA1.pdf

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