DMT6007LFGQ-7 - MOSFET BVDSS 41V-60V POWERDI333

Producentens varenummer

DMT6007LFGQ-7

Intern Part Number

AX-DMT6007LFGQ-7

Fabrikant

Diodes Incorporated

Kort beskrivelse

MOSFET BVDSS 41V-60V POWERDI333

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

916260 Pieces

henvisning Pris

~~USD 0.306204~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har DMT6007LFGQ-7 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for DMT6007LFGQ-7

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : DMT6007LFGQ-7

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET BVDSS 41V-60V POWERDI333

Serie : Automotive, AEC-Q101

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 15A (Ta), 80A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 41.3nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2090pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 2.2W (Ta), 62.5W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerDI3333-8

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : DMT6 , DMT600

Dokumenter til DMT6007LFGQ-7

Dataark : DMT6007LFGQ-7.pdf

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