IRFHM830TR2PBF - MOSFET N-CH 30V 21A PQFN

Producentens varenummer

IRFHM830TR2PBF

Intern Part Number

AX-IRFHM830TR2PBF

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 30V 21A PQFN

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

10824 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IRFHM830TR2PBF på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IRFHM830TR2PBF

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IRFHM830TR2PBF

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 30V 21A PQFN

Serie : HEXFET®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 21A (Ta), 40A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2155pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 2.7W (Ta), 37W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PQFN (3x3)

Pakke / tilfælde : 8-VQFN Exposed Pad

Vægt : -

Tilstand : Nye og originale

relaterede links : IRFH , IRFHM83

Dokumenter til IRFHM830TR2PBF

Dataark : IRFHM830TR2PBF.pdf

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