SISS08DN-T1-GE3 - MOSFET N-CHAN 25 V POWERPAK 1212

Producentens varenummer

SISS08DN-T1-GE3

Intern Part Number

AX-SISS08DN-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN 25 V POWERPAK 1212

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

864010 Pieces

henvisning Pris

~~USD 0.32472~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SISS08DN-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SISS08DN-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SISS08DN-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN 25 V POWERPAK 1212

Serie : TrenchFET® Gen IV

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 25V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 53.9A (Ta), 195.5A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.23 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 82nC @ 10V

Vgs (Max) : +20V, -16V

Inputkapacitans (Ciss) (Max) @ Vds : 3670pF @ 12.5V

FET-funktion : -

Power Dissipation (Max) : 5W (Ta), 65.7W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® 1212-8S

Pakke / tilfælde : PowerPAK® 1212-8S

Vægt : -

Tilstand : Nye og originale

relaterede links : SISS0 , SISS08D

Dokumenter til SISS08DN-T1-GE3

Dataark : SISS08DN-T1-GE3.pdf

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