HGTD1N120BNS9A - IGBT 1200V 5.3A 60W TO252AA
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
IGBT 1200V 5.3A 60W TO252AA
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
684390 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har HGTD1N120BNS9A på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for HGTD1N120BNS9A
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
HGTD1N120BNS9A
Fabrikant :
ON Semiconductor
Beskrivelse :
IGBT 1200V 5.3A 60W TO252AA
Serie :
-
Del Status :
Active
IGBT Type :
NPT
Spænding - Samler Emitter Opdeling (Max) :
1200V
Nuværende - Samler (Ic) (Max) :
5.3A
Nuværende - Collector Pulsed (Icm) :
6A
Vce (på) (Max) @ Vge, Ic :
2.9V @ 15V, 1A
Strøm - Max :
60W
Skifte energi :
70µJ (on), 90µJ (off)
Input Type :
Standard
Gate Charge :
14nC
Td (tænd / sluk) @ 25 ° C :
15ns/67ns
Test betingelse :
960V, 1A, 82 Ohm, 15V
Reverse Recovery Time (trr) :
-
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-252-3, DPak (2 Leads + Tab), SC-63
Leverandør Device Package :
TO-252AA
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til HGTD1N120BNS9A
Dataark :
HGTD1N120BNS9A.pdf
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