BYM11-800HE3_A/H - DIODE GEN PURP 800V 1A DO213AB

Producentens varenummer

BYM11-800HE3_A/H

Intern Part Number

AX-BYM11-800HE3_A/H

Fabrikant

Vishay Semiconductor Diodes Division

Kort beskrivelse

DIODE GEN PURP 800V 1A DO213AB

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

3885385 Pieces

henvisning Pris

~~USD 0.07221~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BYM11-800HE3_A/H på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BYM11-800HE3_A/H

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BYM11-800HE3_A/H

Fabrikant : Vishay Semiconductor Diodes Division

Beskrivelse : DIODE GEN PURP 800V 1A DO213AB

Serie : Automotive, AEC-Q101, Superectifier®

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 800V

Nuværende - Gennemsnitlig Rectified (Io) : 1A

Spænding - Videresend (Vf) (Max) @ Hvis : 1.3V @ 1A

Hastighed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 500ns

Nuværende - Reverse Lækage @ Vr : 5µA @ 800V

Kapacitans @ Vr, F : 15pF @ 4V, 1MHz

Monteringstype : Surface Mount

Pakke / tilfælde : DO-213AB, MELF (Glass)

Leverandør Device Package : DO-213AB

Driftstemperatur - Junction : -65°C ~ 175°C

Vægt : -

Tilstand : Nye og originale

relaterede links : BYM11 , BYM11-80

Dokumenter til BYM11-800HE3_A/H

Dataark : BYM11-800HE3_A/H.pdf

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