TPH2R306NH,L1Q - MOSFET N CH 60V 60A SOP ADV

Producentens varenummer

TPH2R306NH,L1Q

Intern Part Number

AX-TPH2R306NH,L1Q

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N CH 60V 60A SOP ADV

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

367030 Pieces

henvisning Pris

~~USD 0.7644~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TPH2R306NH,L1Q på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPH2R306NH,L1Q

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPH2R306NH,L1Q

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N CH 60V 60A SOP ADV

Serie : U-MOSVIII-H

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 60A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 6.5V, 10V

Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6100pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 1.6W (Ta), 78W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-SOP Advance (5x5)

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : TPH2 , TPH2R30

Dokumenter til TPH2R306NH,L1Q

Dataark : TPH2R306NH,L1Q.pdf

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