HGT1S10N120BNS - IGBT 1200V 35A 298W TO263AB
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
IGBT 1200V 35A 298W TO263AB
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
142670 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har HGT1S10N120BNS på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for HGT1S10N120BNS
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
HGT1S10N120BNS
Fabrikant :
ON Semiconductor
Beskrivelse :
IGBT 1200V 35A 298W TO263AB
Serie :
-
Del Status :
Not For New Designs
IGBT Type :
NPT
Spænding - Samler Emitter Opdeling (Max) :
1200V
Nuværende - Samler (Ic) (Max) :
35A
Nuværende - Collector Pulsed (Icm) :
80A
Vce (på) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Strøm - Max :
298W
Skifte energi :
320µJ (on), 800µJ (off)
Input Type :
Standard
Gate Charge :
100nC
Td (tænd / sluk) @ 25 ° C :
23ns/165ns
Test betingelse :
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
-
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package :
TO-263AB
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til HGT1S10N120BNS
Dataark :
HGT1S10N120BNS.pdf
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