1N5407GHB0G - DIODE GEN PURP 800V 3A DO201AD
Producentens varenummer
Intern Part Number
AX-1N5407GHB0G
Fabrikant
Kort beskrivelse
DIODE GEN PURP 800V 3A DO201AD
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
5730470 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har 1N5407GHB0G på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for 1N5407GHB0G
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
1N5407GHB0G
Fabrikant :
Taiwan Semiconductor Corporation
Beskrivelse :
DIODE GEN PURP 800V 3A DO201AD
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
800V
Nuværende - Gennemsnitlig Rectified (Io) :
3A
Spænding - Videresend (Vf) (Max) @ Hvis :
1V @ 3A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
5µA @ 800V
Kapacitans @ Vr, F :
25pF @ 4V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
DO-201AD, Axial
Leverandør Device Package :
DO-201AD
Driftstemperatur - Junction :
-55°C ~ 150°C
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til 1N5407GHB0G
Dataark :
1N5407GHB0G.pdf
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