RQ3E070BNTB - MOSFET N-CH 30V 7A HSMT8

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET N-CH 30V 7A HSMT8
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
4723300 Pieces
henvisning Pris
USD 0.0594
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har RQ3E070BNTB på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for RQ3E070BNTB

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : RQ3E070BNTB
Fabrikant : Rohm Semiconductor
Beskrivelse : MOSFET N-CH 30V 7A HSMT8
Serie : -
Del Status : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 7A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 27 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 8.9nC @ 10V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : 410pF @ 15V
FET-funktion : -
Power Dissipation (Max) : 2W (Ta)
Driftstemperatur : 150°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : 8-HSMT (3.2x3)
Pakke / tilfælde : 8-PowerVDFN
Vægt : -
Tilstand : Nye og originale
relaterede links : RQ3 , RQ3E0

Dokumenter til RQ3E070BNTB

Dataark : RQ3E070BNTB.pdf

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