SIS612EDNT-T1-GE3 - MOSFET N-CH 20V 50A SMT

Producentens varenummer

SIS612EDNT-T1-GE3

Intern Part Number

AX-SIS612EDNT-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 20V 50A SMT

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

47898 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SIS612EDNT-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SIS612EDNT-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SIS612EDNT-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH 20V 50A SMT

Serie : TrenchFET®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 50A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 14A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V

Vgs (Max) : ±12V

Inputkapacitans (Ciss) (Max) @ Vds : 2060pF @ 10V

FET-funktion : -

Power Dissipation (Max) : 3.7W (Ta), 52W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® 1212-8S (3.3x3.3)

Pakke / tilfælde : PowerPAK® 1212-8S

Vægt : -

Tilstand : Nye og originale

relaterede links : SIS61 , SIS612ED

Dokumenter til SIS612EDNT-T1-GE3

Dataark : SIS612EDNT-T1-GE3.pdf

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