EPC8009 - GANFET TRANS 65V 2.7A BUMPED DIE
Producentens varenummer
Intern Part Number
AX-EPC8009
Fabrikant
Kort beskrivelse
GANFET TRANS 65V 2.7A BUMPED DIE
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
185550 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har EPC8009 på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for EPC8009
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
EPC8009
Fabrikant :
EPC
Beskrivelse :
GANFET TRANS 65V 2.7A BUMPED DIE
Serie :
eGaN®
Del Status :
Active
FET Type :
N-Channel
Teknologi :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
65V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
2.7A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 500mA, 5V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.45nC @ 5V
Vgs (Max) :
+6V, -4V
Inputkapacitans (Ciss) (Max) @ Vds :
52pF @ 32.5V
FET-funktion :
-
Power Dissipation (Max) :
-
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
Die
Pakke / tilfælde :
Die
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til EPC8009
Dataark :
EPC8009.pdf
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