APTM120DA30CT1G - MOSFET N-CH 1200V 31A SP1

Producentens varenummer

APTM120DA30CT1G

Intern Part Number

AX-APTM120DA30CT1G

Fabrikant

Microsemi Corporation

Kort beskrivelse

MOSFET N-CH 1200V 31A SP1

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

17864 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har APTM120DA30CT1G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for APTM120DA30CT1G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : APTM120DA30CT1G

Fabrikant : Microsemi Corporation

Beskrivelse : MOSFET N-CH 1200V 31A SP1

Serie : POWER MOS 8™

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 1200V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 31A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs : 560nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 14560pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 657W (Tc)

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Chassis Mount

Leverandør Device Package : SP1

Pakke / tilfælde : SP1

Vægt : -

Tilstand : Nye og originale

relaterede links : APTM1 , APTM120

Dokumenter til APTM120DA30CT1G

Dataark : APTM120DA30CT1G.pdf

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