SI5915BDC-T1-GE3 - MOSFET 2P-CH 8V 4A 1206-8

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET 2P-CH 8V 4A 1206-8
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
27839 Pieces
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SI5915BDC-T1-GE3 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for SI5915BDC-T1-GE3

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : SI5915BDC-T1-GE3
Fabrikant : Vishay Siliconix
Beskrivelse : MOSFET 2P-CH 8V 4A 1206-8
Serie : TrenchFET®
Del Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET-funktion : Logic Level Gate
Afløb til Source Voltage (VDSS) : 8V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 4A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V
Inputkapacitans (Ciss) (Max) @ Vds : 420pF @ 4V
Strøm - Max : 3.1W
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Pakke / tilfælde : 8-SMD, Flat Lead
Leverandør Device Package : 1206-8 ChipFET™
Vægt : -
Tilstand : Nye og originale
relaterede links : SI591 , SI5915BD

Dokumenter til SI5915BDC-T1-GE3

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