SISH410DN-T1-GE3 - MOSFET N-CHAN PPAK 1212-8SH

Producentens varenummer

SISH410DN-T1-GE3

Intern Part Number

AX-SISH410DN-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN PPAK 1212-8SH

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

916800 Pieces

henvisning Pris

~~USD 0.306024~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SISH410DN-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SISH410DN-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SISH410DN-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN PPAK 1212-8SH

Serie : TrenchFET®

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 22A (Ta), 35A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1600pF @ 10V

FET-funktion : -

Power Dissipation (Max) : 3.8W (Ta), 52W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® 1212-8SH

Pakke / tilfælde : PowerPAK® 1212-8SH

Vægt : -

Tilstand : Nye og originale

relaterede links : SISH4 , SISH410D

Dokumenter til SISH410DN-T1-GE3

Dataark : SISH410DN-T1-GE3.pdf

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