BYV30JT-600PQ - DIODE GEN PURP 600V 30A TO-3P

Producentens varenummer

BYV30JT-600PQ

Intern Part Number

AX-BYV30JT-600PQ

Fabrikant

WeEn Semiconductors

Kort beskrivelse

DIODE GEN PURP 600V 30A TO-3P

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

26565 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BYV30JT-600PQ på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BYV30JT-600PQ

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BYV30JT-600PQ

Fabrikant : WeEn Semiconductors

Beskrivelse : DIODE GEN PURP 600V 30A TO-3P

Serie : -

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 600V

Nuværende - Gennemsnitlig Rectified (Io) : 30A

Spænding - Videresend (Vf) (Max) @ Hvis : 1.8V @ 30A

Hastighed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 65ns

Nuværende - Reverse Lækage @ Vr : 10µA @ 600V

Kapacitans @ Vr, F : -

Monteringstype : Through Hole

Pakke / tilfælde : TO-3P-3, SC-65-3

Leverandør Device Package : TO-3P

Driftstemperatur - Junction : 175°C (Max)

Vægt : -

Tilstand : Nye og originale

relaterede links : BYV3 , BYV30J

Dokumenter til BYV30JT-600PQ

Dataark : BYV30JT-600PQ.pdf

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