JAN1N6622US - DIODE GEN PURP 660V 2A D5A

Producentens varenummer

JAN1N6622US

Intern Part Number

AX-JAN1N6622US

Fabrikant

Microsemi Corporation

Kort beskrivelse

DIODE GEN PURP 660V 2A D5A

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

44478 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har JAN1N6622US på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for JAN1N6622US

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : JAN1N6622US

Fabrikant : Microsemi Corporation

Beskrivelse : DIODE GEN PURP 660V 2A D5A

Serie : Military, MIL-PRF-19500/585

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 660V

Nuværende - Gennemsnitlig Rectified (Io) : 1.2A

Spænding - Videresend (Vf) (Max) @ Hvis : 1.4V @ 1.2A

Hastighed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 30ns

Nuværende - Reverse Lækage @ Vr : 500nA @ 660V

Kapacitans @ Vr, F : 10pF @ 10V, 1MHz

Monteringstype : Surface Mount

Pakke / tilfælde : SQ-MELF, A

Leverandør Device Package : D-5A

Driftstemperatur - Junction : -65°C ~ 150°C

Vægt : -

Tilstand : Nye og originale

relaterede links : JAN , JAN1N

Dokumenter til JAN1N6622US

Dataark : JAN1N6622US.pdf

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