VS-GB100TP120N - IGBT 1200V 200A 650W INT-A-PAK

Producentens varenummer
Intern Part Number
Kort beskrivelse
IGBT 1200V 200A 650W INT-A-PAK
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
7048 Pieces
henvisning Pris
USD 63.553248
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har VS-GB100TP120N på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for VS-GB100TP120N

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : VS-GB100TP120N
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : IGBT 1200V 200A 650W INT-A-PAK
Serie : -
Del Status : Active
IGBT Type : -
Konfiguration : Half Bridge
Spænding - Samler Emitter Opdeling (Max) : 1200V
Nuværende - Samler (Ic) (Max) : 200A
Strøm - Max : 650W
Vce (på) (Max) @ Vge, Ic : 2.2V @ 15V, 100A
Nuværende - Collector Cutoff (Max) : 5mA
Inputkapacitans (Cies) @ Vce : 7.43nF @ 25V
Input : Standard
NTC-termistor : No
Driftstemperatur : 150°C (TJ)
Monteringstype : Chassis Mount
Pakke / tilfælde : INT-A-Pak
Leverandør Device Package : INT-A-PAK
Vægt : -
Tilstand : Nye og originale
relaterede links : VS-G , VS-GB10

Dokumenter til VS-GB100TP120N

Dataark : VS-GB100TP120N.pdf

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