JAN1N4150-1 - DIODE GEN PURP 50V 200MA DO35

Producentens varenummer
Intern Part Number
Kort beskrivelse
DIODE GEN PURP 50V 200MA DO35
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
248725 Pieces
henvisning Pris
USD 1.128
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har JAN1N4150-1 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for JAN1N4150-1

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : JAN1N4150-1
Fabrikant : Microsemi Corporation
Beskrivelse : DIODE GEN PURP 50V 200MA DO35
Serie : Military, MIL-PRF-19500/231
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 50V
Nuværende - Gennemsnitlig Rectified (Io) : 200mA
Spænding - Videresend (Vf) (Max) @ Hvis : 1V @ 200mA
Hastighed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Nuværende - Reverse Lækage @ Vr : 100nA @ 50V
Kapacitans @ Vr, F : -
Monteringstype : Through Hole
Pakke / tilfælde : DO-204AH, DO-35, Axial
Leverandør Device Package : DO-35
Driftstemperatur - Junction : -65°C ~ 175°C
Vægt : -
Tilstand : Nye og originale
relaterede links : JAN , JAN1N

Dokumenter til JAN1N4150-1

Dataark : JAN1N4150-1.pdf

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