IPB80N06S2L11ATMA1 - MOSFET N-CH 55V 80A TO263-3

Producentens varenummer
Intern Part Number
Kort beskrivelse
MOSFET N-CH 55V 80A TO263-3
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
8288 Pieces
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPB80N06S2L11ATMA1 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for IPB80N06S2L11ATMA1

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : IPB80N06S2L11ATMA1
Fabrikant : Infineon Technologies
Beskrivelse : MOSFET N-CH 55V 80A TO263-3
Serie : OptiMOS™
Del Status : Discontinued at Digi-Key
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 55V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 80A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10.7 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : 2075pF @ 25V
FET-funktion : -
Power Dissipation (Max) : 158W (Tc)
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : PG-TO263-3-2
Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vægt : -
Tilstand : Nye og originale
relaterede links : IPB80N , IPB80N06S

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