FDB8870-F085 - MOSFET N-CH 30V 21A TO-263AB

Producentens varenummer

FDB8870-F085

Intern Part Number

AX-FDB8870-F085

Fabrikant

ON Semiconductor

Kort beskrivelse

MOSFET N-CH 30V 21A TO-263AB

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

52626 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har FDB8870-F085 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for FDB8870-F085

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : FDB8870-F085

Fabrikant : ON Semiconductor

Beskrivelse : MOSFET N-CH 30V 21A TO-263AB

Serie : Automotive, AEC-Q101, PowerTrench®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 23A (Ta), 160A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 132nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 5200pF @ 15V

FET-funktion : -

Power Dissipation (Max) : 160W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : TO-263AB

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vægt : -

Tilstand : Nye og originale

relaterede links : FDB8 , FDB887

Dokumenter til FDB8870-F085

Dataark : FDB8870-F085.pdf

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