STH110N10F7-6 - MOSFET N-CH 100V 110A H2PAK-6

Producentens varenummer

STH110N10F7-6

Intern Part Number

AX-STH110N10F7-6

Fabrikant

STMicroelectronics

Kort beskrivelse

MOSFET N-CH 100V 110A H2PAK-6

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

62145 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har STH110N10F7-6 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for STH110N10F7-6

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : STH110N10F7-6

Fabrikant : STMicroelectronics

Beskrivelse : MOSFET N-CH 100V 110A H2PAK-6

Serie : DeepGATE™, STripFET™ VII

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 110A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 55A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 5117pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 150W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : H2PAK-6

Pakke / tilfælde : TO-263-7, D²Pak (6 Leads + Tab)

Vægt : -

Tilstand : Nye og originale

relaterede links : STH1 , STH110

Dokumenter til STH110N10F7-6

Dataark : STH110N10F7-6.pdf

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