IPDD60R102G7XTMA1 - MOSFET NCH 650V 66A PG-HDSOP-10

Producentens varenummer

IPDD60R102G7XTMA1

Intern Part Number

AX-IPDD60R102G7XTMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET NCH 650V 66A PG-HDSOP-10

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

157865 Pieces

henvisning Pris

~~USD 1.777128~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPDD60R102G7XTMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPDD60R102G7XTMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPDD60R102G7XTMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET NCH 650V 66A PG-HDSOP-10

Serie : CoolMOS™ G7

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 23A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 102 mOhm @ 7.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 390µA

Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1320pF @ 400V

FET-funktion : -

Power Dissipation (Max) : 139W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-HDSOP-10-1

Pakke / tilfælde : 10-PowerSOP Module

Vægt : -

Tilstand : Nye og originale

relaterede links : IPDD6 , IPDD60R1

Dokumenter til IPDD60R102G7XTMA1

Dataark : IPDD60R102G7XTMA1.pdf

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