SCT2H12NYTB - 1700V 1.2 OHM 4A SIC FET

Producentens varenummer

SCT2H12NYTB

Intern Part Number

AX-SCT2H12NYTB

Fabrikant

Rohm Semiconductor

Kort beskrivelse

1700V 1.2 OHM 4A SIC FET

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

127010 Pieces

henvisning Pris

~~USD 2.2089~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SCT2H12NYTB på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SCT2H12NYTB

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SCT2H12NYTB

Fabrikant : Rohm Semiconductor

Beskrivelse : 1700V 1.2 OHM 4A SIC FET

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : SiCFET (Silicon Carbide)

Afløb til Source Voltage (VDSS) : 1700V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 4A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 1.1A, 18V

Vgs (th) (Max) @ Id : 4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs : 14nC @ 18V

Vgs (Max) : +22V, -6V

Inputkapacitans (Ciss) (Max) @ Vds : 184pF @ 800V

FET-funktion : -

Power Dissipation (Max) : 44W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : TO-268

Pakke / tilfælde : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Vægt : -

Tilstand : Nye og originale

relaterede links : SCT , SCT2H

Dokumenter til SCT2H12NYTB

Dataark : SCT2H12NYTB.pdf

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