DMN2005UFG-7 - MOSFET N-CH 20V 18.1A POWERDI-8

Producentens varenummer

DMN2005UFG-7

Intern Part Number

AX-DMN2005UFG-7

Fabrikant

Diodes Incorporated

Kort beskrivelse

MOSFET N-CH 20V 18.1A POWERDI-8

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1704600 Pieces

henvisning Pris

~~USD 0.164592~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har DMN2005UFG-7 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for DMN2005UFG-7

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : DMN2005UFG-7

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET N-CH 20V 18.1A POWERDI-8

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 18.1A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 13.5A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 164nC @ 10V

Vgs (Max) : ±12V

Inputkapacitans (Ciss) (Max) @ Vds : 6495pF @ 10V

FET-funktion : -

Power Dissipation (Max) : 1.05W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerDI3333-8

Pakke / tilfælde : 8-PowerWDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : DMN2 , DMN200

Dokumenter til DMN2005UFG-7

Dataark : DMN2005UFG-7.pdf

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