TPN1R603PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
X35 PB-F POWER MOSFET TRANSISTOR
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
888305 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har TPN1R603PL,L1Q på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for TPN1R603PL,L1Q
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
TPN1R603PL,L1Q
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
X35 PB-F POWER MOSFET TRANSISTOR
Serie :
U-MOSIX-H
Del Status :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
80A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Inputkapacitans (Ciss) (Max) @ Vds :
3900pF @ 15V
FET-funktion :
-
Power Dissipation (Max) :
104W (Tc)
Driftstemperatur :
175°C
Monteringstype :
Surface Mount
Leverandør Device Package :
8-TSON Advance (3.3x3.3)
Pakke / tilfælde :
8-PowerVDFN
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til TPN1R603PL,L1Q
Dataark :
TPN1R603PL,L1Q.pdf
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