SQD50N10-8M9L_GE3 - MOSFET N-CHAN 100V TO252

Producentens varenummer

SQD50N10-8M9L_GE3

Intern Part Number

AX-SQD50N10-8M9L_GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN 100V TO252

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

605550 Pieces

henvisning Pris

~~USD 0.46332~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SQD50N10-8M9L_GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SQD50N10-8M9L_GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SQD50N10-8M9L_GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN 100V TO252

Serie : Automotive, AEC-Q101, TrenchFET®

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 50A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2950pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 136W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : TO-252AA

Pakke / tilfælde : TO-252-3, DPak (2 Leads + Tab), SC-63

Vægt : -

Tilstand : Nye og originale

relaterede links : SQD50 , SQD50N10

Dokumenter til SQD50N10-8M9L_GE3

Dataark : SQD50N10-8M9L_GE3.pdf

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