NP23N06YDG-E1-AY - MOSFET N-CH 60V 23A 8HSON

Producentens varenummer

NP23N06YDG-E1-AY

Intern Part Number

AX-NP23N06YDG-E1-AY

Fabrikant

Renesas Electronics America

Kort beskrivelse

MOSFET N-CH 60V 23A 8HSON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

12864 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har NP23N06YDG-E1-AY på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for NP23N06YDG-E1-AY

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : NP23N06YDG-E1-AY

Fabrikant : Renesas Electronics America

Beskrivelse : MOSFET N-CH 60V 23A 8HSON

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 23A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 27 mOhm @ 11.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1800pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 1W (Ta), 60W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-HSON

Pakke / tilfælde : 8-SMD, Flat Lead Exposed Pad

Vægt : -

Tilstand : Nye og originale

relaterede links : NP23N , NP23N06Y

Dokumenter til NP23N06YDG-E1-AY

Dataark : NP23N06YDG-E1-AY.pdf

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