IPI80P04P4L04AKSA1 - MOSFET P-CH TO262-3

Producentens varenummer

IPI80P04P4L04AKSA1

Intern Part Number

AX-IPI80P04P4L04AKSA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET P-CH TO262-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

23264 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPI80P04P4L04AKSA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPI80P04P4L04AKSA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPI80P04P4L04AKSA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET P-CH TO262-3

Serie : Automotive, AEC-Q101, OptiMOS™

Del Status : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 40V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 80A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 176nC @ 10V

Vgs (Max) : +5V, -16V

Inputkapacitans (Ciss) (Max) @ Vds : 3800pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : PG-TO262-3-1

Pakke / tilfælde : TO-262-3 Long Leads, I²Pak, TO-262AA

Vægt : -

Tilstand : Nye og originale

relaterede links : IPI80P , IPI80P04P

Dokumenter til IPI80P04P4L04AKSA1

Dataark : IPI80P04P4L04AKSA1.pdf

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