VS-GB100TH120N - IGBT 1200V 200A 833W INT-A-PAK

Producentens varenummer

VS-GB100TH120N

Intern Part Number

AX-VS-GB100TH120N

Fabrikant

Vishay Semiconductor Diodes Division

Kort beskrivelse

IGBT 1200V 200A 833W INT-A-PAK

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

9181 Pieces

henvisning Pris

~~USD 214.417002~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har VS-GB100TH120N på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for VS-GB100TH120N

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : VS-GB100TH120N

Fabrikant : Vishay Semiconductor Diodes Division

Beskrivelse : IGBT 1200V 200A 833W INT-A-PAK

Serie : -

Del Status : Active

IGBT Type : -

Konfiguration : Half Bridge

Spænding - Samler Emitter Opdeling (Max) : 1200V

Nuværende - Samler (Ic) (Max) : 200A

Strøm - Max : 833W

Vce (på) (Max) @ Vge, Ic : 2.35V @ 15V, 100A

Nuværende - Collector Cutoff (Max) : 5mA

Inputkapacitans (Cies) @ Vce : 8.58nF @ 25V

Input : Standard

NTC-termistor : No

Driftstemperatur : 150°C (TJ)

Monteringstype : Chassis Mount

Pakke / tilfælde : Double INT-A-PAK (3 + 4)

Leverandør Device Package : Double INT-A-PAK

Vægt : -

Tilstand : Nye og originale

relaterede links : VS-G , VS-GB10

Dokumenter til VS-GB100TH120N

Dataark : VS-GB100TH120N.pdf

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