BUK9E1R6-30E,127 - MOSFET N-CH 30V 120A I2PAK

Producentens varenummer

BUK9E1R6-30E,127

Intern Part Number

AX-BUK9E1R6-30E,127

Fabrikant

NXP USA Inc.

Kort beskrivelse

MOSFET N-CH 30V 120A I2PAK

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

24745 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BUK9E1R6-30E,127 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BUK9E1R6-30E,127

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BUK9E1R6-30E,127

Fabrikant : NXP USA Inc.

Beskrivelse : MOSFET N-CH 30V 120A I2PAK

Serie : TrenchMOS™

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 120A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 113nC @ 5V

Vgs (Max) : ±10V

Inputkapacitans (Ciss) (Max) @ Vds : 16150pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 349W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : I2PAK

Pakke / tilfælde : TO-262-3 Long Leads, I²Pak, TO-262AA

Vægt : -

Tilstand : Nye og originale

relaterede links : BUK9E , BUK9E1R6

Dokumenter til BUK9E1R6-30E,127

Dataark : BUK9E1R6-30E,127.pdf

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