CDBJSC101200-G - DIODE SILICON CARBIDE POWER SCHO
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
DIODE SILICON CARBIDE POWER SCHO
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
65270 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har CDBJSC101200-G på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for CDBJSC101200-G
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
CDBJSC101200-G
Fabrikant :
Comchip Technology
Beskrivelse :
DIODE SILICON CARBIDE POWER SCHO
Serie :
-
Del Status :
Active
Diodetype :
Silicon Carbide Schottky
Spænding - DC-omvendt (Vr) (Max) :
1200V
Nuværende - Gennemsnitlig Rectified (Io) :
10A (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1.7V @ 10A
Hastighed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Nuværende - Reverse Lækage @ Vr :
100µA @ 1200V
Kapacitans @ Vr, F :
780pF @ 0V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
TO-220-2
Leverandør Device Package :
TO-220-2
Driftstemperatur - Junction :
-55°C ~ 175°C
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til CDBJSC101200-G
Dataark :
CDBJSC101200-G.pdf
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