IPG20N10S4L35AATMA1 - MOSFET 2N-CH 8TDSON

Producentens varenummer
Intern Part Number
Kort beskrivelse
MOSFET 2N-CH 8TDSON
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
912680 Pieces
henvisning Pris
USD 0.307404
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPG20N10S4L35AATMA1 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for IPG20N10S4L35AATMA1

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : IPG20N10S4L35AATMA1
Fabrikant : Infineon Technologies
Beskrivelse : MOSFET 2N-CH 8TDSON
Serie : Automotive, AEC-Q101, OptiMOS™
Del Status : Active
FET Type : 2 N-Channel (Dual)
FET-funktion : Logic Level Gate
Afløb til Source Voltage (VDSS) : 100V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 20A
Rds On (Max) @ Id, Vgs : 35 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs : 17.4nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds : 1105pF @ 25V
Strøm - Max : 43W
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Surface Mount
Pakke / tilfælde : 8-PowerVDFN
Leverandør Device Package : PG-TDSON-8-10
Vægt : -
Tilstand : Nye og originale
relaterede links : IPG20N , IPG20N10S

Dokumenter til IPG20N10S4L35AATMA1

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