DMG7N65SJ3 - MOSFET BVDSS 501V 650V TO251

Producentens varenummer

DMG7N65SJ3

Intern Part Number

AX-DMG7N65SJ3

Fabrikant

Diodes Incorporated

Kort beskrivelse

MOSFET BVDSS 501V 650V TO251

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

485195 Pieces

henvisning Pris

~~USD 0.578238~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har DMG7N65SJ3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for DMG7N65SJ3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : DMG7N65SJ3

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET BVDSS 501V 650V TO251

Serie : Automotive, AEC-Q101

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 650V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 5.5A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 886pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-251

Pakke / tilfælde : TO-251-3, IPak, Short Leads

Vægt : -

Tilstand : Nye og originale

relaterede links : DMG , DMG7N

Dokumenter til DMG7N65SJ3

Dataark : DMG7N65SJ3.pdf

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