TPAR3J S1G - DIODE AVALANCHE 600V 3A TO277A

Producentens varenummer
Intern Part Number
Kort beskrivelse
DIODE AVALANCHE 600V 3A TO277A
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
1931615 Pieces
henvisning Pris
USD 0.145248
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TPAR3J S1G på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for TPAR3J S1G

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : TPAR3J S1G
Fabrikant : Taiwan Semiconductor Corporation
Beskrivelse : DIODE AVALANCHE 600V 3A TO277A
Serie : -
Del Status : Active
Diodetype : Avalanche
Spænding - DC-omvendt (Vr) (Max) : 600V
Nuværende - Gennemsnitlig Rectified (Io) : 3A
Spænding - Videresend (Vf) (Max) @ Hvis : 1.55V @ 3A
Hastighed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 120ns
Nuværende - Reverse Lækage @ Vr : 10µA @ 600V
Kapacitans @ Vr, F : 58pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : TO-277, 3-PowerDFN
Leverandør Device Package : TO-277A (SMPC)
Driftstemperatur - Junction : -55°C ~ 175°C
Vægt : -
Tilstand : Nye og originale
relaterede links : TPA , TPAR3

Dokumenter til TPAR3J S1G

Dataark : TPAR3J S1G.pdf

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