IPB26CNE8N G - MOSFET N-CH 85V 35A TO263-3

Producentens varenummer
Intern Part Number
Kort beskrivelse
MOSFET N-CH 85V 35A TO263-3
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
8232 Pieces
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPB26CNE8N G på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for IPB26CNE8N G

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : IPB26CNE8N G
Fabrikant : Infineon Technologies
Beskrivelse : MOSFET N-CH 85V 35A TO263-3
Serie : OptiMOS™
Del Status : Discontinued at Digi-Key
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 85V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 35A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 26 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : 2070pF @ 40V
FET-funktion : -
Power Dissipation (Max) : 71W (Tc)
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : D²PAK (TO-263AB)
Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vægt : -
Tilstand : Nye og originale
relaterede links : IPB2 , IPB26C

Dokumenter til IPB26CNE8N G

Dataark : IPB26CNE8N G.pdf

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