TPH6R30ANL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Producentens varenummer

TPH6R30ANL,L1Q

Intern Part Number

AX-TPH6R30ANL,L1Q

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

X35 PB-F POWER MOSFET TRANSISTOR

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1102320 Pieces

henvisning Pris

~~USD 0.25452~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TPH6R30ANL,L1Q på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPH6R30ANL,L1Q

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPH6R30ANL,L1Q

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : X35 PB-F POWER MOSFET TRANSISTOR

Serie : U-MOSVIII-H

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 66A (Ta), 45A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 22.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 4300pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 2.5W (Ta), 54W (Tc)

Driftstemperatur : 150°C

Monteringstype : Surface Mount

Leverandør Device Package : 8-SOP Advance (5x5)

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : TPH6 , TPH6R30

Dokumenter til TPH6R30ANL,L1Q

Dataark : TPH6R30ANL,L1Q.pdf

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