TPW1R306PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Producentens varenummer

TPW1R306PL,L1Q

Intern Part Number

AX-TPW1R306PL,L1Q

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

X35 PB-F POWER MOSFET TRANSISTOR

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

333995 Pieces

henvisning Pris

~~USD 0.84~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TPW1R306PL,L1Q på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPW1R306PL,L1Q

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPW1R306PL,L1Q

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : X35 PB-F POWER MOSFET TRANSISTOR

Serie : U-MOSIX-H

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 260A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 8100pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 960mW (Ta), 170W (Tc)

Driftstemperatur : 175°C

Monteringstype : Surface Mount

Leverandør Device Package : 8-DSOP Advance

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : TPW1 , TPW1R30

Dokumenter til TPW1R306PL,L1Q

Dataark : TPW1R306PL,L1Q.pdf

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