SIDR610DP-T1-GE3 - MOSFET N-CHAN 200V PPAK SO-8DC

Producentens varenummer

SIDR610DP-T1-GE3

Intern Part Number

AX-SIDR610DP-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN 200V PPAK SO-8DC

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

243520 Pieces

henvisning Pris

~~USD 1.15209~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SIDR610DP-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SIDR610DP-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SIDR610DP-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN 200V PPAK SO-8DC

Serie : TrenchFET®

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 200V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 8.9A (Ta), 39.6A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 7.5V, 10V

Rds On (Max) @ Id, Vgs : 31.9 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1380pF @ 100V

FET-funktion : -

Power Dissipation (Max) : 6.25W (Ta), 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® SO-8DC

Pakke / tilfælde : PowerPAK® SO-8

Vægt : -

Tilstand : Nye og originale

relaterede links : SIDR6 , SIDR610D

Dokumenter til SIDR610DP-T1-GE3

Dataark : SIDR610DP-T1-GE3.pdf

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