SQV120N10-3M8_GE3 - MOSFET N-CH 100V 120A TO262-3

Producentens varenummer

SQV120N10-3M8_GE3

Intern Part Number

AX-SQV120N10-3M8_GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 100V 120A TO262-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

225955 Pieces

henvisning Pris

~~USD 1.24164~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SQV120N10-3M8_GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SQV120N10-3M8_GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SQV120N10-3M8_GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH 100V 120A TO262-3

Serie : Automotive, AEC-Q101, TrenchFET®

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 120A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 190nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 7230pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 250W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-262-3

Pakke / tilfælde : TO-262-3 Long Leads, I²Pak, TO-262AA

Vægt : -

Tilstand : Nye og originale

relaterede links : SQV12 , SQV120N1

Dokumenter til SQV120N10-3M8_GE3

Dataark : SQV120N10-3M8_GE3.pdf

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